The seventh scientific workshop
presented by the 22nd URSI-C in Japan
presented by the 22nd URSI-C in Japan
Session title:
"Simulation technique for design of radio-frequency integrated circuits"
1. Convener: Dr. Nobuyuki Itoh, Okayama Prefectural University
2. Date/time: 12:30 - 16:30, 5 July, 2013
3. Venue: Toshiba Science Museum, Kawasaki, Japan
4. Registration fee: Free
5. Listed attendees: 38 persons
6. Local arrangement: Dr. Nobuyuki Itoh, Okayama Prefectural University
7. Session title: "Simulation technique for design of radio-frequency integrated circuits"
8. Exhibition and presentation:
60 min. exhibition and 40 min. presentation including Q & for each speaker, respectively
- 12:30 - 13:30 Guided tour at Toshiba Science Museum
- 13:30 - 13:40 Opening Talk, Prof. Masahiro Morikura URSI-C-Japan, Chair
- 13:40 - 14:20 "RF modeling of MOSFETs including process variation", Dr. Sadayuki Yoshitomi, Toshiba Corporation
- 14:20 - 15:00 "Challenges and Solutions for RFIC Realization", Mr. Hideyoshi Sugaya, Cadence Design Systems, Japan
- 15:00 - 15:10 Coffee break
- 15:10 - 15:50 "Methodology for substrate coupling analysis with high frequency accuracy", Dr. Sotiris Bantas, Helic Inc.
- 15:50 - 16:30 "Behavior Model of RF transceivers", Takahiro Kikuchi, Agilent Technologies
9.Reception: Restaurant Matsuriboshi (Kawasaki)
10.The steering committee meeting took place from 11:00 to 11:50 on 5 July, 2013.
11. Concluding Remarks
It is remarkable, in these twenty years, personal telecommunications, especially mobile phone, have been widely popular. In these evolutions, mainstream of electronics parts was radio-frequency integrated circuits, particularly silicon based radio-frequency integrated circuits. However, silicon based semiconductor devices have involved some of difficulty on their electrical characteristics such as high frequency characteristics, conductive substrate, etc. with compare than compound semiconductor. Moreover, radio-frequency integrated circuits faced more difficulty due to highly integration and coexistence with digital circuits, and they have been overcome. In above story, modeling and simulation techniques have supported the realization of radio-frequency integrated circuits, and also they will be more advanced in future.
In this workshop, entitled "Simulation technique for design of radio-frequency integrated circuits", there were presentation of almost all steps of radio-frequency integrated circuits design, through from device modeling to system design, and were active discussions. In concretely, they were "RF modeling of MOSFETs including process variation", "Challenges and Solutions for RFIC Realization", "Methodology for substrate coupling analysis with high frequency accuracy", and "Behavior Model of RF transceivers".
Many attendees had a time of active discussion, and knew importance of simulation techniques, and deeply understood them, in this workshop.
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