1. Convener: Tatsuya Ohguro, Toshiba Device Process development center

2. Date/time: 11:00 - 17:10, 13-Nov.-2009

3. Venue: Izu-resort house of Nihon Dempa Kogyo Co., Shizuoka, Japan

4. Registration fee: Free

5. Listed attendees: 27 persons

6. Local arrangement: Tatsuya Ohguro, Toshiba Device Process development center

7. Session title: "Near Field Communications;"

8. Presentation: 60 min including Q&A for each speaker

• 1. Opening Talk, Dr. Kenji Itoh URSI-C-Japan, Chair
• 2. "Inter-chip communication by Inductance coupling," Prof. Tadahiro Kuroda, Keio University
• 3."Inter-chip signal transfer by open-ring resonator," Prof. Yasuo Ohno, Tokushima University
• 4."Interface for near field communication by millimeter wave " Dr. Toshiro Hiratsuka, Murata Manufacturing Co
• 5."Trend of RF MEMS for small size, high accuracy oscillator and next generation mobile telecommunication" Dr. Takeo Oita, Nihon Dempa Kogyo Co.
• 6."Body near field communication and the application" Dr. Yuichi Kado, NTT
  

7. Concluding Remarks
This workshop was entitled "Near Field Communications" and presented five talks. Not only application but also cost, performance and future trend were discussed.
First presentation is inter-chip communication of high-speed digital signal which is attractive for high speed, low cast and low power consumption.
Second is Inter-chip signal transfer, which is useful for low cast assembly technique for especially millimeter wave application.
Third is Interface for near field communications by millimeter wave, which is important item from point of view of the users.
Fourth is topics and trend of RF MEMS. Presenter is sure that RF switch will be key technology because of low loss and high isolation.
Final is body near field communication and the application. Security system will be simple because that can be recognized through just their body without any cards.
Many attendances actively and deeply discussed their questions in order to clear those. In night session, future power amplifier device, especially Si MOS was discussed. Also education issues for high frequency circuit were discussed.