1. Convener: Dr. Tatsuya Ohguro, Toshiba Corp.

2. Date/time: Workshop 13:00 - 17:00, Night session 21:00-22:00 February 4, 2011.

3. Venue: The 2nd floor, Mori no Yado, Miyajima, Hiroshima, Japan

4. Registration fee: Free

5. Listed attendees: 29 persons

6. Local arrangement: Prof. Fujishima (Hiroshima University)

7. Session title: "Limitation of integrated circuit"

8. Presentation:

• 1. " Future vision of scaled Si CMOS device"
  Prof. Hiramoto (Univ. of Tokyo)
  
• 2. "Pass, now and future of device and circuit technology for Si RF SoC"
  Prof. Matsuzawa (Tokyo Institute of Technology)
  
• 3. "Technology strategy of platform in analog semiconductor - position of analog semiconductor in business"
  Prof. Hamasaki (Hiroshima Institute of Technology)
  
• 4. "Trend of RF circuit for advanced CMOS"
  Dr. Tanaka (Renesas technology)
  

9. Reception and Lamp Session:
"Tera-hertz CMOS circuit" , Dr. Fujimoto (STARC)

10. The steering committee meeting took place from 08:00 to 9:00 on 5-Feb.-2011.

11. Concluding Remarks